ver1.0 s mhop microelectronics c orp. a features super high dense cell design for low r ds(on) . rugged and reliable. to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw jun,03,2010 1 details are subject to change without notice. s g d product summary v dss i d r ds(on) (m ) typ 100v 40a 20 @ vgs=10v g d s stf series to-220f STP45L01F green product symbolv ds v gs i dm e as 2 50 w a p d c 62.5 -55 to 150 i d units parameter 100 40 118 c/w vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 560 mj absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja a 32 t c =70 c t c =70 c 40 w a a
STP45L01F jun,03,2010 ver1.0 www.samhop.com.tw 2 symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 20 g fs s c iss 3200 pf c oss 241 pf c rss 176 pf q g 81 nc 74 67 39 t d(on) 40 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =20a v ds =10v , i d =20a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 25 c f=1.0mhz c v sd nc q gs nc q gd 8 10.2 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =20a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =7a 0.78 1.3 v notes v ds =50v,i d =20a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=5mh,v dd = 80v.(see figure13) _ _ _ 2 2.9 4 24
STP45L01F jun,03,2010 ver1.0 www.samhop.com.tw 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 60 48 36 24 12 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v v gs =5v v gs =6v v gs =7v 30 24 18 12 6 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 1 12 24 36 48 60 v g s =10v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =20a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
STP45L01F jun,03,2010 ver 1.0 www.samhop.com.tw 4 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 0.3 r d s ( o n ) l imit v gs =10v single pulse t a =25 c d c 10 m s 1ms 100 u s 10u s r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 90 75 60 45 30 15 0 2 4 6 8 10 0 125 c 75 c 25 c i d =20a 60.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 125 c ciss coss crss 4200 3500 2800 2100 1400 700 0 10 15 20 25 30 0 5 1 10 100 1 10 100 500 vds=50v,id=1a vgs=10v 60 6 td(on) t r td(off ) tf 10 86 4 2 0 0 5 10 15 20 25 30 35 40 v ds =50v i d =20a 25 c 75 c
t p v ( br )d ss i a s f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 t rans ient t hermal impedance s quare wave p uls e duration (ms ec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective www.samhop.com.tw 5 d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e STP45L01F jun,03,2010 ver1.0 r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v
www.samhop.com.tw 6 e # # . % . d . . ' h d g i j f o a a1 b b1 c c2 e l1 l2 l4 l5 o e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70 STP45L01F jun,03,2010 ver1.0
STP45L01F www.samhop.com.tw jun,03,2010 7 f tube ver1.0
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